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atk:电场下打开硅烯和双层石墨烯的带隙

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atk:电场下打开硅烯和双层石墨烯的带隙 [2018/05/14 13:56] – [参考文献] xie.congweiatk:电场下打开硅烯和双层石墨烯的带隙 [2018/06/15 10:23] (当前版本) – [电场下打开硅烯和双层石墨烯的带隙] fermi
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 在本教程中,您将学习如何在 ATK 批量计算中插入金属栅电极并使用它们施加电场。您将使用这些功能来研究在电场存在下双层石墨烯和硅烯中带隙的打开。假定您已经熟悉了 **VNL** 的基本功能。 在本教程中,您将学习如何在 ATK 批量计算中插入金属栅电极并使用它们施加电场。您将使用这些功能来研究在电场存在下双层石墨烯和硅烯中带隙的打开。假定您已经熟悉了 **VNL** 的基本功能。
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 +<WRAP center info 100%>
 +=== 提示 ===
 +**本教程使用特定版本的QuantumATK创建,因此涉及的截图和脚本参数可能与您实际使用的版本略有区别,请在学习时务必注意。**
 +</WRAP>
 +
  
 {{ :atk:introbar.png?direct&900 |}} {{ :atk:introbar.png?direct&900 |}}
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 ===== 参考 ===== ===== 参考 =====
   * [[https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.102.236804|S. Cahangirov, M. Topsakal, E. Akturk, H. Sahin, and S. Ciraci, Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium, Physical Review Letters 102, 236804 (2009)]]   * [[https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.102.236804|S. Cahangirov, M. Topsakal, E. Akturk, H. Sahin, and S. Ciraci, Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium, Physical Review Letters 102, 236804 (2009)]]
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   * [[http://journals.aps.org/prb/abstract/10.1103/PhysRevB.85.075423|N. D. Drummond, V. Zolyomi, and V. I. Fal’ko, Electrically tunable band gap in silicene, Physical Review B 85, 075423 (2012)]]   * [[http://journals.aps.org/prb/abstract/10.1103/PhysRevB.85.075423|N. D. Drummond, V. Zolyomi, and V. I. Fal’ko, Electrically tunable band gap in silicene, Physical Review B 85, 075423 (2012)]]
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   * [[http://etd.ohiolink.edu/ap/1?0|R. Zhou, “Structural And Electronic Properties of Two-Dimensional Silicene, Graphene, and Related Structures”, Master Thesis, Wright State University, Electrical Engineering, Dayton OH, USA (2012)]]   * [[http://etd.ohiolink.edu/ap/1?0|R. Zhou, “Structural And Electronic Properties of Two-Dimensional Silicene, Graphene, and Related Structures”, Master Thesis, Wright State University, Electrical Engineering, Dayton OH, USA (2012)]]
 ===== 补充参考 ===== ===== 补充参考 =====
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 一个关于六方BN的相似研究,可参见 一个关于六方BN的相似研究,可参见
   * [[https://link.springer.com/article/10.1140%2Fepjb%2Fe2012-30236-6|K. Tang et al., “Electronic and transport properties of a biased multilayer hexagonal boron nitride”, European Physical Journal B 85, 301 (2012)]]   * [[https://link.springer.com/article/10.1140%2Fepjb%2Fe2012-30236-6|K. Tang et al., “Electronic and transport properties of a biased multilayer hexagonal boron nitride”, European Physical Journal B 85, 301 (2012)]]
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 +  * 英文原文:[[https://docs.quantumwise.com/tutorials/opening_a_band_gap/opening_a_band_gap.html|https://docs.quantumwise.com/tutorials/opening_a_band_gap/opening_a_band_gap.html]]
  
  
atk/电场下打开硅烯和双层石墨烯的带隙.1526277414.txt.gz · 最后更改: 2018/05/14 13:56 由 xie.congwei

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