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Fig. 2. Contour plots of LDOS on intrinsic (a) NiSi2/(001)Si and (b) NiSi2/(111)Si where the interface between NiSi2 and Si located at 0 SBH is extracted at z=21.6 Å and z=18.4Å away from the interface fro (a) and (b), respectively, where the LDOS at Fermi level becomes small enough. Extracted SBHs for electrons and holes are denoted as Φb,n and Φb,p, respectively

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